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Charge transport in metal/semiconductor/metal devices based on organic semiconductors with an exponential density of states

机译：基于状态指数密度的有机半导体在金属/半导体/金属器件中的电荷传输

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Ramachandhran, B; Huizing, HGA; Coehoorn, R Reinder;
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年度 2006
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1. Charge transport in metal/semiconductor/metal devices based on organic semiconductors with an exponential density of states [J] . B. Ramachandhran, H. G. A. Huizing, R. Coehoorn Physical review. B, Condensed Matter And Materials Physics . 2006,第23期

机译：基于状态指数密度的有机半导体在金属/半导体/金属器件中的电荷传输
2. Analysis of Interface Charge Densities for High-k Dielectric Materials based Metal Oxide Semiconductor Devices [J] . N. P. Maity, R. R. Thakur, Reshmi Maity, International journal of nanoscience . 2016,第5a6期

机译：基于金属氧化物半导体器件的高k电介质材料的界面电荷密度分析
3. Study of Interface Charge Densities for ZrO2and HfO2Based Metal-Oxide-Semiconductor Devices [J] . N. P.Maity, ReshmiMaity, R. K.Thapa, Advances in materials science and engineering . 2014,第1期

机译：ZrO2和HfO2基金属氧化物半导体器件的界面电荷密度研究
4. High Carrier Density and Metallic Conductivity in Organic Semiconductors Achieved by Electrostatic Charge Injection [C] . C. Daniel Frisbie American Chemical Society . 2007

机译：通过静电电荷注入实现的有机半导体中的高载流子密度和金属电导率
5. Microscopic studies of the fate of charges in organic semiconductors: Scanning Kelvin probe measurements of charge trapping, transport, and electric fields in p- and n-type devices [D] . Smieska, Louisa Marion 2015

机译：微观研究有机半导体中电荷的命运：扫描开尔文探针测量p型和n型器件中的电荷俘获，传输和电场
6. Semiconductors: High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers (Adv. Sci. 8/2017) [O] . Wen Li, Fengning Guo, Haifeng Ling, 2017

机译：半导体：基于并五苯/ P13 /并五苯作为电荷传输层和陷阱层的有机半导体异质结构的高性能非易失性有机场效应晶体管存储器（Adv。Sci。8/2017）
7. Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices [O] . Deng Shaoren, Xie Qi, Deduytsche Davy, 2011

机译：有效降低锗基金属氧化物半导体器件中的固定电荷密度
8. Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS (Metal Oxide Semiconductors) Devices [R] . Krantz, R. J., Aukerman, L. W., Zeitlow, T. C. 1989

机译：mOs（金属氧化物半导体）器件中陷阱电荷积累的应用场和总剂量依赖性

Charge transport in metal/semiconductor/metal devices based on organic semiconductors with an exponential density of states

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